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Bounded weak solutions to matrix drift-diffusion model for spin-coherent electron transport in semiconductors

机译:自旋相干矩阵漂移 - 扩散模型的有界弱解   半导体中的电子传输

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摘要

The global-in-time existence and uniqueness of bounded weak solutions to aspinorial matrix drift-diffusion model for semiconductors is proved. Developingthe electron density matrix in the Pauli basis, the coefficients (chargedensity and spin-vector density) satisfy a parabolic $4\times 4$cross-diffusion system. The key idea of the existence proof is to work withdifferent variables: the spin-up and spin-down densities as well as theparallel and perpendicular components of the spin-vector density with respectto the magnetization. In these variables, the diffusion matrix becomesdiagonal. The proofs of the $L^\infty$ estimates are based on Stampacchiatruncation as well as Moser- and Alikakos-type iteration arguments. Themonotonicity of the entropy (or free energy) is also proved. Numericalexperiments in one space dimension using a finite-volume discretizationindicate that the entropy decays exponentially fast to the equilibrium state.
机译:证明了半导体微细矩阵漂移扩散模型的有界弱解的全局存在性和唯一性。在保利基础上发展电子密度矩阵,系数(电荷密度和自旋矢量密度)满足抛物线$ 4 \乘以4 $交叉扩散系统。存在证明的关键思想是使用不同的变量:自旋向上和向下旋转的密度,以及自旋矢量密度相对于磁化强度的平行和垂直分量。在这些变量中,扩散矩阵变为对角线。 $ L ^ \ infty $估计的证明基于Stampacchiatruncation以及Moser和Alikakos类型的迭代参数。还证明了熵(或自由能)的单调性。使用有限体积离散化在一个空间维度上进行的数值实验表明,熵以指数方式快速衰减至平衡状态。

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